DTD113EKT146
- Description
- Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 500 mA 200 MHz 200 mW Surface Mount SMT3
- Collector Emitter Voltage (VCEO)
- 300mV
- Continuous Collector Current
- 500mA
- Transition Frequency
- 200MHz
- hFE Min
- 33
- Datasheet
Quantity
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- High Frequency Operation: 200 MHz
- Maximum Collector Current: 500 mA
- Voltage Rating: 50 V
- Surface Mount Package for Space Efficiency
- Lead Free and RoHS Compliant
The ROHM Pre-Biased Bipolar Transistor NPN is designed for high-frequency applications, offering exceptional performance with a maximum breakdown voltage of 50 V and a continuous collector current of 500 mA. This surface mount transistor is ideal for compact designs and is packaged in tape and reel for efficient handling. With a transition frequency of 200 MHz, it ensures reliable operation in various electronic circuits, making it a versatile choice for engineers and designers.
The Pre-Biased Bipolar Transistor (BJT) NPN is commonly used in amplifying and switching applications due to its ability to handle currents up to 500 mA and voltages of 50 V. It is ideal for compact surface mount designs, making it suitable for a variety of electronic devices including consumer electronics and automotive systems. Engineers and designers leverage this transistor for efficient performance in high-frequency circuits with a transition frequency of 200 MHz.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.