IXLF19N250A

Description
Trans Igbt 2.5KV 32A Isoplus I4-PAC Rohs Compliant: Yes |ixys Semiconductor IXLF19N250A
Collector Emitter Saturation Voltage
3.2V
Collector Emitter Voltage (VCEO)
2.5kV
Max Power Dissipation
250W
Datasheet
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  • Collector Emitter Breakdown Voltage: 2.5kV
  • Max Collector Current: 32A
  • Power Dissipation: 250W
  • Max Operating Temperature: 150°C
  • Min Operating Temperature: -55°C
  • Lead-Free & RoHS Compliant

The IXYS Semiconductor IXLF19N250A is a high-performance Transistor IGBT designed for demanding applications requiring high voltage and current handling capabilities. With a collector emitter breakdown voltage of 2.5kV and a maximum collector current of 32A, this component is ideal for power electronics in industrial and commercial settings. Its robust design ensures reliable operation even in extreme temperature conditions, making it a versatile choice for various applications.

The Trans IGBT 2.5KV 32A Isoplus I4-PAC is used for high-voltage switching applications in industrial and power conversion systems. This device is popular among engineers for its ability to handle significant power dissipation and high collector current, making it suitable for tasks such as motor control and renewable energy systems. Its reliable performance at elevated temperatures ensures longevity and stability in demanding environments.

Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.

AS6081
AS9120B
ISO 9001
QMS STD 9090
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