IXBF32N300

Description
Trans IGBT Chip N-CH 3000V 40A 160000mW 3-Pin ISOPLUS I4-PAC
Collector Emitter Voltage (VCEO)
3.2V
Max Power Dissipation
160W
Datasheet
Product Image
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  • High Collector Emitter Breakdown Voltage: 3kV
  • Maximum Collector Current: 40A
  • Fast Reverse Recovery Time: 1.5µs
  • Max Power Dissipation: 160W
  • Lead-Free & RoHS Compliant

The Littelfuse Trans IGBT Chip N-CH is a powerful electronic component designed for high voltage applications. With a collector emitter breakdown voltage of 3kV and a maximum collector current of 40A, this IGBT chip is ideal for demanding power management tasks. Its robust design ensures reliable performance in various industrial applications, making it a preferred choice for engineers seeking efficiency and durability in their circuits.

The Trans IGBT Chip is designed for high-power switching applications in industrial and consumer electronics. Commonly used in inverters, motor drives, and power supplies, it provides efficient performance with a high breakdown voltage and current capacity. Engineers and manufacturers in sectors like renewable energy and automotive rely on its robust specifications for demanding applications.

Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.

AS6081
AS9120B
ISO 9001
QMS STD 9090
Quantity
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