AON6512
- Description
- Power Field-Effect Transistor, 32A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
- Gate to Source Voltage (Vgs)
- 20V
- Drain to Source Voltage (Vdss)
- 30V
- Continuous Drain Current (ID)
- 150A
- Input Capacitance
- 3.43nF
- Datasheet
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- High Continuous Drain Current: 150A
- Low On-Resistance: 1.7mΩ
- Wide Gate to Source Voltage Range: 20V
- Robust Power Dissipation: 83W
- Operating Temperature Range: -55°C to 150°C
The Alpha & Omega Semiconductor Power Field-Effect Transistor is a high-performance N-Channel MOSFET designed for demanding applications requiring efficient power management. With a continuous drain current rating of 150A and a maximum drain to source voltage of 30V, this transistor is ideal for various power conversion and switching applications. Its compact DFN EP package ensures optimal thermal performance and reliability, making it suitable for modern electronic designs.
The Power Field-Effect Transistor (FET) is commonly used in power management applications due to its high efficiency and reliability. Key capabilities include controlling high current and voltage levels, making it suitable for use in motor drivers, power amplifiers, and switch-mode power supplies. It is widely utilized by electronics manufacturers and engineers in various sectors, including automotive, industrial, and consumer electronics.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.