RUM002N02T2L
- Surface Mount Design for Easy Integration
- Maximum Drain to Source Voltage of 20V
- Continuous Drain Current Rating of 200mA
- Low On-Resistance of 1.2Ω
- Fast Switching Times with Rise and Fall Times of 10ns
The ROHM RUM002N02 Series is a high-performance N-Channel MOSFET designed for surface mount applications. With a maximum drain to source voltage of 20V and a continuous drain current of 200mA, this MOSFET is ideal for various electronic circuits requiring efficient power management. Packaged in a compact SOT-23 case, it ensures reliable operation in space-constrained environments while maintaining excellent thermal performance across a wide temperature range from -55°C to 150°C.
The RUM002N02 MOSFET is designed for efficient switching in low-power applications where space is a constraint, such as in power management for portable devices and power supplies. With a maximum drain current of 200 mA and a 20 V drain-to-source voltage, it is commonly used in consumer electronics, automotive systems, and industrial control circuits. Its compact SOT-23 package and surface mount design make it suitable for automated assembly processes.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.