UM6J1NTN
- Description
- Transistor MOSFET Array Dual P-CH 30V 200mA 6-Pin SOT-363 Emboss T/R
- Gate to Source Voltage (Vgs)
- 20V
- Drain to Source Voltage (Vdss)
- 30V
- Continuous Drain Current (ID)
- 200mA
- Drain to Source Resistance
- 900mO
- Input Capacitance
- 30pF
- Datasheet
Quantity
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- Dual P-Channel MOSFET Array
- 30V Drain-to-Source Voltage
- 200mA Continuous Drain Current
- 1.4Ω Maximum On-Resistance
- Fast Switching with 5ns Rise Time
- Compact 6-Pin SOT-363 Package
The ROHM UM6J1NTN is a dual P-channel MOSFET array in a 6-pin SOT-363 surface-mount package. Each transistor is rated for a 30V drain-to-source voltage and 200mA continuous drain current, with a maximum on-resistance of 1.4Ω. The device dissipates up to 150mW and operates from -55°C to 150°C.
The UM6J1NTN is used for small-signal load switching, power rail selection, and logic-level switching in low-current circuits. Its dual-transistor SOT-363 package saves board space in portable devices, consumer electronics, and computing peripherals. It is used by design engineers and contract manufacturers building compact, low-power circuits.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.