AONR21321
- Description
- P-Channel 3 V 24A (Tc) 4.1W (Ta), 24W (Tc) Surface Mount 8-DFN-EP (3x3)
- Gate to Source Voltage (Vgs)
- 25V
- Drain to Source Voltage (Vdss)
- 30V
- Continuous Drain Current (ID)
- 24A
- Drain to Source Resistance
- 13.5mO
- Max Junction Temperature (Tj)
- 150°C
- Datasheet
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.
- Drain to Source Voltage: 30V
- Continuous Drain Current: 24A
- Gate to Source Voltage: 25V
- Power Dissipation: 4.1W
- Drain to Source Resistance: 13.5mΩ
- Max Junction Temperature: 150°C
The Alpha & Omega Semiconductor P-Channel 3 V 24A is a high-performance surface mount MOSFET designed for efficient power management in various electronic applications. With a compact 8-DFN-EP package measuring 3x3 mm, this component is ideal for space-constrained designs. It features a robust continuous drain current rating of 24A and operates effectively within a wide temperature range, making it suitable for demanding environments.
The P-Channel MOSFET is commonly used in power management applications, such as load switching and power supply circuits. Its high continuous drain current capability and low on-resistance make it suitable for efficient performance in consumer electronics and industrial devices. Engineers and designers utilize this component for its reliability under varying temperatures and operational conditions.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.