RZM002P02T2L
- Description
- P-Channel 150 mW 20 V 1.2 Ohm 1.2V Drive P-Channel MOSFET Surface Mount - VMT-3
- Gate to Source Voltage (Vgs)
- 10V
- Drain to Source Voltage (Vdss)
- 20V
- Continuous Drain Current (ID)
- 200mA
- Drain to Source Resistance
- 1.2O
- Input Capacitance
- 115pF
- Datasheet
Quantity
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- Surface Mount Design for Easy Integration
- Maximum Drain to Source Voltage: 20V
- Continuous Drain Current: 200mA
- Low On-Resistance: 1.2Ω
- Fast Switching Times with Rise Time: 4ns and Fall Time: 17ns
- Wide Operating Temperature Range: -55°C to 150°C
The ROHM P-Channel VMT-3 is a high-efficiency MOSFET designed for surface mount applications, offering exceptional performance in compact electronic designs. With a maximum drain to source voltage of 20V and a continuous drain current of 200mA, this component is ideal for power management and switching applications. Its low on-resistance of 1.2Ω ensures minimal power loss, making it a reliable choice for various electronic circuits.
The P-Channel MOSFET is commonly used in low-power switching applications where efficient control of electrical loads is essential. With a maximum rating of 20V and a low on-resistance of 1.2 Ohm, it is ideal for battery-powered devices, signal amplification, and load switching in consumer electronics. Engineers and designers in the electronics industry utilize this component for its reliability and compact surface-mount packaging.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.