STGP10NC60KD
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- High Collector Emitter Breakdown Voltage 600V
- Max Collector Current 20A
- Power Dissipation up to 65W
- Fast Reverse Recovery Time 22ns
- Wide Operating Temperature Range -55°C to 150°C
The STMicroelectronics Trans IGBT Chip N-CH 600V 20A is a powerful and efficient component designed for high-performance applications. With a robust TO-220AB package, this IGBT chip is ideal for various power electronics applications, providing reliable operation and excellent thermal performance. It features a high collector emitter breakdown voltage and is suitable for demanding environments, ensuring optimal performance in your electronic designs.
The Trans IGBT Chip N-CH 600V 20A is designed for efficient power switching in various applications, including industrial motor drives, power converters, and renewable energy systems. With a collector-emitter breakdown voltage of 600V and a maximum collector current of 20A, it is suitable for high-power operations. Electrical engineers and designers in the electronics industry commonly use this device for its reliable performance and robust thermal management.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.