STGP20H60DF
- Description
- Trans IGBT Chip N-CH 600V 40A 100000mW 3-Pin(3+Tab) TO-220AB Tube
- Max Power Dissipation
- 167W
- Collector Emitter Saturation Voltage
- 2V
- Collector Emitter Voltage (VCEO)
- 600V
- Datasheet
Quantity
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- Collector Emitter Breakdown Voltage: 600V
- Max Collector Current: 40A
- Power Dissipation: 167W
- Collector Emitter Saturation Voltage: 2V
- Reverse Recovery Time: 90ns
- Wide Operating Temperature Range (-55°C to 175°C)
- Lead Free and RoHS Compliant
The STMicroelectronics Trans IGBT Chip N-CH 600V 40A is a robust and efficient insulated gate bipolar transistor designed for high-performance applications. With a collector-emitter breakdown voltage of 600V and a maximum collector current of 40A, this component is ideal for power conversion and motor control applications. Housed in a TO-220 package, it offers excellent thermal performance with a maximum power dissipation of 167W, making it suitable for demanding environments. This lead-free IGBT is compliant with RoHS standards and operates effectively across a wide temperature range, ensuring reliability in various industrial applications.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.