STGW40H65DFB
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- High Collector Emitter Breakdown Voltage: 650V
- Maximum Collector Current: 80A
- Low Collector Emitter Saturation Voltage: 1.8V
- Fast Reverse Recovery Time: 62ns
- Wide Operating Temperature Range: -55°C to 175°C
- Lead-Free & RoHS Compliant
The STMicroelectronics Trans IGBT Chip N-CH 650V 80A is a powerful and efficient electronic component designed for high-performance applications. This IGBT chip is housed in a robust TO-247 package, making it suitable for demanding environments. With a maximum collector current of 80A and a collector emitter breakdown voltage of 650V, it delivers exceptional performance in power conversion and motor control applications. Its compact design and high power dissipation capability ensure reliability and efficiency in various industrial settings.
The Trans IGBT Chip is commonly used in high-power applications such as industrial motor drives, renewable energy systems, and power converters. It excels in switching applications due to its high voltage and current ratings, making it ideal for controlling large loads efficiently. Engineers and designers in the power electronics field typically use this component to enhance the performance and reliability of their systems.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.