STGWT60H65DFB
- High Collector Emitter Breakdown Voltage 650V
- Maximum Collector Current 80A
- Low Collector Emitter Saturation Voltage 1.6V
- Fast Reverse Recovery Time 60ns
- Wide Operating Temperature Range -55°C to 175°C
- Lead-Free & RoHS Compliant
The STMicroelectronics Trans IGBT Chip N-CH is a powerful and efficient electronic component designed for high-performance applications. With a collector emitter breakdown voltage of 650V and a maximum collector current of 80A, this IGBT chip is ideal for demanding power management tasks. Its robust design ensures reliable operation in various environments, making it suitable for industrial and commercial applications.
The Trans IGBT Chip is designed for high-performance power conversion applications, often utilized in industrial motor drives, power inverters, and welding equipment. With a high collector current capacity and breakdown voltage, it is suitable for demanding environments requiring efficient energy management. Engineers and designers in sectors like renewable energy and manufacturing commonly use this component to enhance system reliability and performance.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.