STGW60H65DFB
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.
- High Speed Operation with 60 A Max Collector Current
- Collector Emitter Breakdown Voltage: 650 V
- Low Collector Emitter Saturation Voltage: 1.6 V
- Fast Reverse Recovery Time: 60 ns
- Wide Operating Temperature Range: -55°C to 175°C
The STMicroelectronics HB Series Trench Gate Field-Stop IGBT is designed for high-speed applications requiring efficient power management. With a collector emitter breakdown voltage of 650 V and a maximum collector current of 60 A, this IGBT ensures reliable performance in demanding environments. Housed in a TO-247 package, it is suitable for various industrial applications, providing excellent thermal performance and low conduction losses.
The Trench gate field-stop IGBT is designed for high-speed switching applications, providing efficient power management in various industrial and automotive systems. Common use cases include inverter drives, power supplies, and renewable energy systems. Engineers and designers in power electronics frequently choose this IGBT for its robust performance and reliability under high temperatures.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.