STGW80H65DFB

Description
Trench gate field-stop IGBT, HB series 650 V, 80 A high speed
Max Power Dissipation
469W
Collector Emitter Saturation Voltage
1.6V
Collector Emitter Voltage (VCEO)
650V
Datasheet
STMicroelectronics STGW80H65DFB product image

Quantity

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AS6081
AS9120B
ISO 9001
QMS STD 9090

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