STW48NM60N
- Description
- N-channel 600 V, 0.055 Ohm typ., 44 A MDmesh(TM) II Power MOSFET in TO-247 package
- Gate to Source Voltage (Vgs)
- 25V
- Drain to Source Voltage (Vdss)
- 600V
- Continuous Drain Current (ID)
- 39A
- Drain to Source Resistance
- 70mO
- Input Capacitance
- 4.285nF
- Datasheet
Quantity
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- Drain to Source Voltage: 600V
- Continuous Drain Current: 39A
- Low On-Resistance: 70mΩ
- High Power Dissipation: 255W
- Fast Switching Times: Rise Time 18ns Fall Time 25.5ns
The STMicroelectronics N-channel 600 V MDmesh(TM) II Power MOSFET is designed for high-efficiency power management applications. With a low on-resistance of 0.055 Ohm typ and a continuous drain current rating of 39 A, this MOSFET ensures optimal performance in demanding environments. Housed in a robust TO-247 package, it is suitable for various applications requiring reliable power switching and thermal management.
This high-performance N-channel MOSFET is designed for use in power management applications in various electronic devices. It provides efficient switching capabilities and high voltage handling, making it ideal for applications in industrial equipment, power supplies, and automotive systems. Engineers and designers favor this component for its reliability, low on-resistance, and robust power dissipation characteristics.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.