MPN
BAT54SLT1G
Manufacturer
Description
Diode, Schottky; 220 ma (max.) @ 125C If; 225 Mw @ 25C; SOT-23 | on Semiconductor BAT54SLT1G
MPN
BAT54SLT1G
Total Available Quantity
50,999
Lead time to Ship
In Stock
Ships from
NETHERLANDS
Country of Origin
China
Date Code
22+
Main Attributes
Forward Voltage
350mV
Max Reverse Leakage Current
2µA
Max Repetitive Reverse Voltage (Vrrm)
30V
Average Rectified Current
200mA
Max Junction Temperature (Tj)
150°C
Reverse Recovery Time
5ns
Specifications
Series
BAT54
Lifecycle Status
Active
Mount
Surface Mount
Case/Package
SOT-23
Number of Pins
3
Packaging
Tape & Reel
Package Quantity
3,000
Reverse Voltage
30V
Forward Current
200mA
Capacitance
7.6pF
Power Dissipation
225mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Output Current
200Ma
RoHS
Compliant
Contact Plating
Tin
ECCN
EAR99
Element Configuration
Dual
Height
1.11mm
HTS
8541.10.0070
Lead Free
Lead Free
Length
2.9mm
Manufacturer Lifecycle Status
Active
Max Forward Surge Current (Ifsm)
600mA
Max Power Dissipation
225mW
Max Reverse Voltage (DC)
30V
MSL
1
Peak Non-Repetitive Surge Current
1A
Peak Reverse Current
500nA
Radiation Hardening
No
REACH SVHC
No
Schedule B
8541100070
Width
1.3mm
About This Product
The on Semiconductor BAT54SLT1G is a high-performance Schottky diode designed for efficient switching applications. With a maximum forward current of 220 mA and a low forward voltage drop of 350 mV, this diode ensures minimal power loss and high efficiency. Packaged in a compact SOT-23 form factor, it is ideal for space-constrained designs while providing reliable performance across a wide temperature range from -55°C to 150°C. This dual element configuration makes it suitable for various electronic applications requiring fast switching and low leakage current.
MPN
BAT54SLT1G
Total Available Quantity
50,999
Lead time to Ship
In Stock
Ships from
NETHERLANDS
Country of Origin
China
Date Code
22+
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