BAT54SLT1G
- Max Forward Current: 220mA
- Low Forward Voltage Drop: 350mV
- Fast Reverse Recovery Time: 5ns
- Compact SOT-23 Package
- Max Repetitive Reverse Voltage: 30V
- Max Power Dissipation: 225mW
The on Semiconductor BAT54SLT1G is a high-performance Schottky diode designed for efficient switching applications. With a maximum forward current of 220 mA and a low forward voltage drop of 350 mV, this diode ensures minimal power loss and high efficiency. Packaged in a compact SOT-23 form factor, it is ideal for space-constrained designs while providing reliable performance across a wide temperature range from -55°C to 150°C. This dual element configuration makes it suitable for various electronic applications requiring fast switching and low leakage current.
The BAT54SLT1G Schottky diode by on Semiconductor is designed for applications requiring fast switching and low power loss. With a maximum forward current of 220mA and a forward voltage of 350mV, this diode is ideal for use in circuits where efficiency and speed are critical. Its SOT-23 package makes it suitable for surface mount applications, and its RoHS compliance ensures environmentally-friendly operation. Whether used in voltage regulation, signal demodulation, or other electronic devices, the BAT54SLT1G diode provides reliable performance and precise functionality.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.