BSS123

Description
Transistor MOSFET Negative Channel 100 Volt 0.17A 3-Pin SOT-23
Gate to Source Voltage (Vgs)
20V
Drain to Source Voltage (Vdss)
100V
Continuous Drain Current (ID)
170mA
Drain to Source Resistance
1.2Ω
Input Capacitance
73pF
Max Junction Temperature (Tj)
150°C
Datasheet
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  • High Drain to Source Voltage: 100V
  • Continuous Drain Current: 170mA
  • Fast Switching Times: Turn-On Delay 1.7ns Turn-Off Delay 17ns
  • Low Drain to Source Resistance: 1.2Ω
  • Wide Operating Temperature Range: -55°C to 150°C
  • Lead-Free & RoHS Compliant

The onsemi Transistor MOSFET Negative Channel is a high-performance electronic component designed for efficient switching applications. With a maximum drain to source voltage of 100V and a continuous drain current of 170mA, this MOSFET is ideal for various electronic circuits. Its compact SOT-23 package ensures easy integration into surface mount designs, making it a versatile choice for modern electronics.

This MOSFET is commonly used in electronic circuits for switching and amplification applications where low voltage and current handling are required. With a maximum drain-to-source voltage of 100V and a continuous drain current of 170mA, it is ideal for consumer electronics and compact designs. Engineers and designers utilize it in surface mount technology (SMT) applications due to its small footprint and efficient performance characteristics.

Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.

AS6081
AS9120B
ISO 9001
QMS STD 9090

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