MPN
IRF840PBF
Manufacturer
Description
IRF840PBF N-channel MOSFET Transistor; 8 A; 500 V; 3-Pin TO-220AB
MPN
IRF840PBF
Total Available Quantity
-
Main Attributes
Gate to Source Voltage (Vgs)
20V
Drain to Source Voltage (Vdss)
500V
Continuous Drain Current (ID)
8A
Drain to Source Resistance
850mO
Input Capacitance
1.3nF
Specifications
Mount
Through Hole
Case/Package
TO-220AB
Number of Pins
3
Packaging
Bulk
Drain to Source Breakdown Voltage
500V
Threshold Voltage
4V
Power Dissipation
125W
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
RoHS
Compliant
Contact Plating
Tin
Current Rating
8A
Element Configuration
Single
Fall Time
20ns
Height
9.01mm
Lead Free
Lead Free
Length
10.41mm
Max Power Dissipation
125W
Nominal Vgs
4V
Number of Channels
1
Number of Elements
1
Radiation Hardening
No
Rds On Max
850mO
REACH SVHC
No
Recovery Time
970ns
Rise Time
23ns
Schedule B
8541290080
Turn-Off Delay Time
49ns
Turn-On Delay Time
14ns
Voltage Rating (DC)
500V
Weight
6.000006g
Width
4.7mm
MPN
IRF840PBF
Total Available Quantity
-
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