MRF150

Description
RF Power Transistor, 0.01 to 0.11 GHz, 1400 W, 29 dB, 50 V, LDMOS, SOT-539A
Gain
17dB
Datasheet
Product Image

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  • High Output Power: 1400 W
  • Frequency Range: 0.01 to 0.11 GHz
  • Gain: 29 dB
  • Operating Voltage: 50 V
  • Max Operating Temperature: 150°C
  • Min Operating Temperature: -65°C
  • Current Rating: 16A
  • Single Element Configuration
  • Bulk Packaging
  • Lead Free and RoHS Compliant

The MACOM RF Power Transistor is a high-performance LDMOS device designed for applications requiring robust power amplification in the frequency range of 0.01 to 0.11 GHz. With an impressive output power of 1400 W and a gain of 29 dB, this transistor is ideal for high-power RF applications. Its durable construction and wide operating temperature range make it suitable for demanding environments, ensuring reliability and efficiency in performance. Packaged in a compact SOT-539A format, this lead-free component meets RoHS compliance standards, making it an excellent choice for modern electronic designs.

Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.

AS6081
AS9120B
ISO 9001
QMS STD 9090

Quantity

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