CE3512K2
- Description
- RF MOSFET pHEMT FET 2 V 1 mA 12GHz 13.7dB 125mW 4-Micro-X
- Datasheet
Quantity
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- High Frequency Operation up to 12GHz
- Current Rating of 15mA
- Power Output of 125mW
- Gain of 13.7dB for Enhanced Signal Strength
- RoHS Compliant for Environmental Safety
The California Eastern Laboratories RF Mosfet pHEMT FET is a cutting-edge electronic component designed for high-frequency applications up to 12GHz. With a current rating of 15mA and a power output of 125mW, this device delivers exceptional performance with a gain of 13.7dB. Its compact design and RoHS compliance make it an ideal choice for modern electronic systems that require efficient and reliable RF amplification.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
AS6081
AS9120B
ISO 9001
QMS STD 9090
Quantity
Need this part?
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.
Fusion-Tested. Quality Guaranteed.
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