A2T07D160W04SR3
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- High Efficiency for RF Applications
- Average Power Output of 160 W
- Frequency Range from 710 to 960 MHz
- Surface Mount Design for Easy Integration
- Gold Contact Plating for Enhanced Conductivity
- Lead-Free & RoHS Compliant
The NXP Semiconductors Airfast RF Power LDMOS Transistor is designed for high-efficiency applications in the 710-960 MHz frequency range. With a robust average power output of 160 W and a supply voltage of 28 V, this transistor is ideal for various RF amplification needs. Its surface mount design ensures easy integration into compact systems while maintaining excellent thermal performance. The device is packaged in tape and reel for convenient handling and assembly, making it a reliable choice for modern electronic applications.
The Airfast RF Power LDMOS Transistor is designed for high-efficiency power amplification in RF applications, specifically in the 710-960 MHz range. Commonly used in wireless communication systems such as base stations and repeaters, it offers an average output power of 160 W at 28 V. This transistor is favored by engineers looking for robust, reliable performance in RF transmission.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.