RQ3E120BNTB
- Description
- MOSFET Transistor, N-Channel, 12 A, 30 V, 0.0066 ohm, 10 V, 2.5 V RoHS Compliant: Yes
- Drain to Source Voltage (Vdss)
- 30V
- Continuous Drain Current (ID)
- 12A
- Drain to Source Resistance
- 6.6mO
- Input Capacitance
- 1.5nF
- Datasheet
Quantity
Need this part?
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.
Fusion-Tested. Quality Guaranteed.
- Continuous Drain Current: 12 A
- Drain to Source Voltage: 30 V
- Low On-Resistance: 6.6 mO
- Threshold Voltage: 2.5 V
- Max Operating Temperature: 150°C
- Lead Free and RoHS Compliant
- Packaging: Tape & Reel
The ROHM N Channel MOSFET Transistor is a high-performance electronic component designed for efficient power management in various applications. With a continuous drain current of 12 A and a drain-to-source voltage of 30 V, this surface mount MOSFET ensures reliable operation in demanding environments. Its low on-resistance of 6.6 mO minimizes power loss, making it an ideal choice for energy-efficient designs. This RoHS compliant device is packaged in tape and reel for easy handling and assembly, ensuring compatibility with modern manufacturing processes.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
AS6081
AS9120B
ISO 9001
QMS STD 9090
Quantity
Need this part?
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.
Fusion-Tested. Quality Guaranteed.
See something worth saving? Create an account to track this part and get alerts on price and availability updates.
The Latest Insights