SI1922EDH-T1-GE3
- Description
- SI1922EDH-T1-GE3 Dual N-Channel MOSFET Transistor; 1.3 A; 20 V; 6-Pin SOT-363
- Gate to Source Voltage (Vgs)
- 8V
- Drain to Source Voltage (Vdss)
- 20V
- Continuous Drain Current (ID)
- 1.3A
- Drain to Source Resistance
- 165mO
- Max Junction Temperature (Tj)
- 150°C
- Datasheet
Quantity
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- Continuous Drain Current: 1.3 A
- Drain to Source Voltage: 20 V
- Low On-Resistance: 198 mΩ
- Fast Switching Times: Rise Time 80 ns and Fall Time 220 ns
- Compact 6-Pin SOT-363 Package
- Lead Free and RoHS Compliant
The Vishay SI1922EDH-T1-GE3 is a high-performance Dual N-Channel MOSFET Transistor designed for efficient power management in various electronic applications. With a compact 6-Pin SOT-363 package, this MOSFET offers reliable operation with a continuous drain current of 1.3 A and a drain to source voltage rating of 20 V. Its low on-resistance and fast switching capabilities make it an ideal choice for applications requiring high efficiency and minimal power loss.
The SI1922EDH-T1-GE3 Dual N-Channel MOSFET Transistor is commonly used in low-voltage switching applications, such as power management and signal routing in compact electronic devices. With its high efficiency and low on-resistance, it is ideal for battery-operated systems and consumer electronics. Engineers and designers in the semiconductor field utilize this component for improving performance in space-constrained environments.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.