IRFD110PBF
- Description
- Single N-Channel 60 V 0.54 Ohms Through Hole Power Mosfet - HVMDIP-4
- Gate to Source Voltage (Vgs)
- 20V
- Drain to Source Voltage (Vdss)
- 100V
- Continuous Drain Current (ID)
- 1A
- Drain to Source Resistance
- 540mO
- Input Capacitance
- 180pF
- Max Junction Temperature (Tj)
- 175°C
- Datasheet
Quantity
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- Maximum Drain to Source Voltage: 100V
- Low On-Resistance: 540mΩ
- Continuous Drain Current: 1A
- Fast Switching Times: Rise Time 16ns Fall Time 16ns
- Wide Operating Temperature Range: -55°C to 175°C
The Vishay HVMDIP-4 is a high-performance single N-channel power MOSFET designed for efficient switching applications. With a maximum drain to source voltage of 100V and a low on-resistance of 540mΩ, this MOSFET ensures minimal power loss and high reliability in various electronic circuits. Its through-hole DIP package allows for easy integration into existing designs, making it an ideal choice for both hobbyists and professionals in the electronics industry.
The Single N-Channel 60 V 0.54 Ohms Through Hole Power Mosfet is commonly used in power management applications, including switching regulators, motor control, and amplification circuits. Its low on-resistance and high breakdown voltage make it ideal for efficient energy transfer in compact spaces. Engineers and designers in electronics utilize this MOSFET for its reliability and performance in various electronic devices and systems.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.