SISS71DN-T1-GE3

• P-Channel MOSFET Rated 100 Volts Drain-to-Source
• Continuous Drain Current of 23 Amperes
• On-Resistance of 47 Milliohms
• Gate-to-Source Rating of 20 volts, 2.5 Volt Gate Threshold
• Turn-on Delay 10 nanoseconds, Turn-Off Delay 25 Nanoseconds
• Operating Range -50°C to 150°C, Maximum Junction Temperature 150°C

The SISS71DN-T1-GE3 is a single P-channel power MOSFET from Vishay in an 8-pin surface-mount package with a height of 830µm. Its verified attributes give a drain-to-source voltage and breakdown rating of 100 volts, a continuous drain current of 23 amperes and an on-resistance of 47 milliohms. The SISS71DN-T1-GE3 has a gate-to-source rating of 20 volts, a 2.5-volt gate threshold, and turn-on and turn-off delays of 10 and 25 nanoseconds. It operates from -50°C to 150°C and is recorded as RoHS non-compliant.

P-channel MOSFETs are used as high-side switches, where the device sits between the supply and the load and can be driven without a bootstrapped or charge-pumped gate driver. Typical roles include reverse-polarity and reverse-current protection, inrush and soft-start control, power-path multiplexing between adapter and battery sources, and load disconnect in always-on rails. A 100-volt rating puts the SISS71DN-T1-GE3 in the 48-volt bus and telecom class rather than in low-voltage consumer designs, and the 150°C junction limit supports elevated-ambient operation. Buyers are industrial, telecom and power-distribution board designers and their contract manufacturers.