SI7315DN-T1-GE3

• High Drain to Source Voltage: 150 V
• Continuous Drain Current: 8.9 A
• Low Rds On Max: 315 mΩ
• Fast Switching Times: Rise Time 9 ns Fall Time 8 ns
• Wide Operating Temperature Range: -50°C to 150°C

The Vishay Power MOSFET is a high-performance P Channel device designed for efficient power management in various applications. With a maximum drain to source voltage of 150 V and a continuous drain current of 8.9 A, this MOSFET ensures reliable operation in demanding environments. Its compact PowerPAK 1212 surface mount package allows for easy integration into your designs while maintaining excellent thermal performance.

This Power MOSFET is commonly used in power management applications, including switching regulators, motor controls, and signal switching. Its high efficiency and low on-state resistance make it suitable for use in consumer electronics, automotive, and industrial systems. Designers and engineers often utilize this component for its robust performance under high-voltage conditions.