SI8851EDB-T2-E1
- Description
- Trans MOSFET P-CH 20V 16.7A 30-Pin Power Micro Foot T/R
- Gate to Source Voltage (Vgs)
- 8V
- Drain to Source Voltage (Vdss)
- 20V
- Continuous Drain Current (ID)
- 16.7A
- Drain to Source Resistance
- 8mO
- Input Capacitance
- 6.9nF
- Datasheet
Quantity
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- P-channel MOSFET, 20V Vdss
- 16.7A continuous drain current
- 8mO maximum on-resistance (Rds on)
- 1V threshold voltage, 3.1W max power dissipation
- 30-pin surface-mount package, tape and reel
- -55°C to 150°C operating temperature range
The Vishay SI8851EDB-T2-E1 is a P-channel power MOSFET rated for a 20V drain-to-source voltage and 16.7A continuous drain current. It offers a low 8mO on-resistance and is supplied in a 30-pin surface-mount PowerPAK-style package on tape and reel. The device operates across a -55°C to 150°C temperature range.
The SI8851EDB-T2-E1 is used in power management circuits such as load switching, power distribution, and DC-DC conversion where a low on-resistance P-channel device is needed. Its surface-mount package suits compact power stages on densely populated boards. Power electronics engineers specify this Vishay MOSFET in computing, industrial, and consumer power designs.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.