SQM110P06-8M9L_GE3
- Description
- Trans MOSFET P-CH 60V 110A Automotive 3-Pin(2+Tab) D2PAK T/R
- Gate to Source Voltage (Vgs)
- 20V
- Drain to Source Voltage (Vdss)
- 60V
- Continuous Drain Current (ID)
- 110A
- Drain to Source Resistance
- 7.1mO
- Max Junction Temperature (Tj)
- 175°C
- Datasheet
Quantity
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- P-channel MOSFET with 60V drain-to-source voltage (Vdss)
- 110A continuous drain current with low 7.1mO on-resistance
- 20V gate-to-source voltage and 230W power dissipation
- Fast switching: 15ns rise time, 48ns fall time, 15ns turn-on and 71ns turn-off delay
- High 175°C maximum junction and operating temperature, rated down to -55°C
- Single-channel surface-mount D2PAK package, RoHS compliant
The Vishay SQM110P06-8M9L_GE3 is a single P-channel MOSFET rated at 60V with a continuous drain current of 110A, supplied in a surface-mount D2PAK package. It offers low on-resistance of 7.1mO and a high 175°C maximum junction temperature for demanding switching applications. The SQM110P06-8M9L_GE3 is RoHS compliant and designed for rugged, high-current use.
The Vishay SQM110P06-8M9L_GE3 is typically used for high-current switching, load switching, and power management in circuits requiring a P-channel device, such as reverse-polarity protection, high-side switches, and motor-control stages. Its high current handling, low on-resistance, and 175°C rating suit rugged and high-reliability designs. Power-electronics and automotive-grade hardware engineers commonly specify this MOSFET for demanding switching applications.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.