SFH 3710-Z

Description
Silicon NPN Phototransistor with Vλ Characteristics, -40 to 85 °C, 1.3 x 2 x 0.8 mm
Collector Emitter Saturation Voltage
100mV
Collector Emitter Voltage (VCEO)
500mV
Dark Current
3nA
Max Collector Current
20mA
Datasheet
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  • Compact 805 Surface Mount Package
  • Wide Operating Temperature Range (-40°C to 85°C)
  • High Collector Emitter Breakdown Voltage (5.5V)
  • Low Dark Current (3nA) for Enhanced Sensitivity
  • 120° Viewing Angle for Optimal Light Detection
  • RoHS Compliant for Environmental Safety

The ams OSRAM Silicon NPN Phototransistor is a high-performance optical sensor designed for a variety of applications requiring precise light detection. With a compact 805 surface mount package, this phototransistor operates efficiently across a wide temperature range from -40°C to 85°C. Featuring a 120° viewing angle and a low dark current of just 3nA, it ensures reliable performance in diverse environments. This phototransistor is ideal for use in consumer electronics, industrial automation, and lighting control systems, making it a versatile choice for engineers and designers.

Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.

AS6081
AS9120B
ISO 9001
QMS STD 9090

Quantity

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