K4A8G165WC-BCWE
- High Speed Operation at 3200MHz
- Low Operating Voltage of 1.2V
- Compact FBGA Package for Space-Saving Designs
- Synchronous Memory Technology for Enhanced Performance
- Wide Operating Temperature Range from 0°C to 85°C
The Samsung DDR4 8Gb x 16 memory module is designed to deliver exceptional performance and efficiency for modern computing applications. With a frequency of 3200MHz and a low operating voltage of 1.2V, this synchronous dynamic random-access memory (SDRAM) module is ideal for high-speed data processing. Housed in a compact FBGA package, it is suitable for surface mount applications and operates reliably within a temperature range of 0°C to 85°C, making it a versatile choice for various electronic devices.
The DRAM Chip DDR4 SDRAM 8Gb is designed for high-performance computing applications, providing reliable memory storage and fast data access. It features a density of 8Gb, a synchronous memory type, and operates at a frequency of 3200MHz, making it suitable for modern computing needs. The chip is encased in a 96-pin FBGA package and operates at a low voltage of 1.2V, ensuring energy efficiency in various devices such as laptops, desktops, and servers.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.