K4A8G165WC-BCWE
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- High Speed Operation at 3200MHz
- Low Operating Voltage of 1.2V
- Compact FBGA Package for Space-Saving Designs
- Synchronous Memory Technology for Enhanced Performance
- Wide Operating Temperature Range from 0°C to 85°C
The Samsung DDR4 8Gb x 16 memory module is designed to deliver exceptional performance and efficiency for modern computing applications. With a frequency of 3200MHz and a low operating voltage of 1.2V, this synchronous dynamic random-access memory (SDRAM) module is ideal for high-speed data processing. Housed in a compact FBGA package, it is suitable for surface mount applications and operates reliably within a temperature range of 0°C to 85°C, making it a versatile choice for various electronic devices.
The DRAM Chip DDR4 SDRAM 8Gb is designed for high-performance computing applications, providing reliable memory storage and fast data access. It features a density of 8Gb, a synchronous memory type, and operates at a frequency of 3200MHz, making it suitable for modern computing needs. The chip is encased in a 96-pin FBGA package and operates at a low voltage of 1.2V, ensuring energy efficiency in various devices such as laptops, desktops, and servers.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.