BCX53-16,115

Description
Single Bipolar Transistor, PNP, 80 V, 1 A, 1.35 W, SOT-89 (SC-62), 3 Pins, Surface Mount
Collector Emitter Saturation Voltage
-500mV
Collector Emitter Voltage (VCEO)
-80V
hFE Min
100
Max Junction Temperature (Tj)
150°C
Datasheet
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  • High Voltage Rating: -80 V Collector Emitter Voltage
  • Compact SOT-89 Package with 3 Pins
  • Power Dissipation: 1.35 W
  • Gain Bandwidth Product: 145 MHz
  • Ambient Temperature Range: Up to 150°C

The Nexperia Single Bipolar Transistor PNP is a high-performance electronic component designed for efficient switching and amplification in various applications. With a maximum collector current of 1 A and a collector emitter voltage rating of -80 V, this transistor is ideal for use in low to medium power circuits. Housed in a compact SOT-89 package, it offers excellent thermal performance with a maximum junction temperature of 150°C, making it suitable for demanding environments.

The Single Bipolar Transistor is commonly used in signal amplification and switching applications in various electronic circuits. It supports a maximum collector current of 1 A and is ideal for use in low-power applications. Engineers and hobbyists utilize this component for its high gain and low saturation voltage characteristics, making it suitable for compact surface mount designs.

Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.

AS6081
AS9120B
ISO 9001
QMS STD 9090

Quantity

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