BSM75GD120DLCBOSA1

Description
Transistor IGBT Module N-CH 1200V 125A 20V Screw Mount Tray
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  • High Voltage Rating: 1200V
  • High Current Capacity: 125A
  • 20V Gate Drive Voltage
  • Easy Installation with Screw Mount Design
  • Robust and Reliable Performance for Industrial Applications

The Infineon Transistor IGBT Module N-CH 1200V 125A 20V Screw Mount Tray is a high-performance insulated gate bipolar transistor (IGBT) module designed for demanding power applications. With a voltage rating of 1200V and a current capacity of 125A, this module is ideal for use in industrial drives, renewable energy systems, and other high-power applications. Its robust design ensures reliable operation and efficient performance, making it a preferred choice for engineers seeking durability and efficiency in their power electronics solutions.

Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.

AS6081
AS9120B
ISO 9001
QMS STD 9090

Quantity

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