K4B4G0846E-BYMA
- Description
- DDR3L 4Gb x 8 1.35V 1866MHz 0°C~95°C FBGA-78
- Memory Technology
- DDR3L
- Memory Type
- SDRAM
- Data Bus Width
- 8b
- Memory Size
- 4Gb
Quantity
10,000 AvailableLet us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.
- Low Operating Voltage of 1.35V
- High Frequency of 1866MHz
- 4Gb Density for Enhanced Memory Capacity
- Synchronous Memory Technology for Improved Performance
- Compact FBGA Package for Space-Saving Designs
The Samsung DDR3L 4Gb x 8 memory module is designed for high-performance computing applications, offering exceptional speed and efficiency. With a density of 4Gb and a data bus width of 8 bits, this synchronous DRAM operates at a low voltage of 1.35V, making it an energy-efficient choice for modern systems. Encased in a compact FBGA package, it is ideal for surface mount applications and delivers reliable performance across a wide temperature range from 0°C to 95°C.
The DRAM Chip DDR3L SDRAM 4Gb 512Mx8 1.35V/1.5V 78-Pin FBGA is used for high-performance memory applications in various electronic devices. It provides synchronous data transfer rates of up to 1866MHz and operates at low voltages (1.35V/1.5V), making it suitable for energy-efficient computing, mobile devices, and other applications requiring reliable and fast memory solutions.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
10,000 AvailableLet us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.