PSS50S71F6

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Power Ipm Transistor
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  • High Isolation Voltage of 2.5kV
  • Optimized for Power Management Applications
  • Robust Design for Enhanced Reliability
  • Excellent Thermal Performance

The Mitsubishi Power Ipm Transistor is a cutting-edge Insulated Gate Bipolar Transistor (IGBT) designed for high-efficiency power management applications. With an impressive isolation voltage of 2.5kV, this component ensures reliable performance in demanding environments. Ideal for use in industrial drives, renewable energy systems, and electric vehicles, the Mitsubishi Power Ipm Transistor combines robust design with superior thermal performance, making it an essential choice for engineers seeking to optimize their power solutions.

Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.

AS6081
AS9120B
ISO 9001
QMS STD 9090
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