K4A8G165WG-BCWE

- High Speed Operation at 3200MHz
- Low Voltage Requirement of 1.2V
- Temperature Range from 0°C to 85°C
- 96 Pin FBGA Package for Compact Design
- 16b Data Bus Width for Enhanced Data Transfer
The Samsung DDR4 8Gb x 16 memory module is designed to deliver exceptional performance and efficiency for modern computing applications. With a frequency of 3200MHz and a low operating voltage of 1.2V, this synchronous dynamic random-access memory (SDRAM) module ensures high-speed data processing while minimizing power consumption. Its robust design is optimized for surface mount technology, making it an ideal choice for a variety of electronic devices.
The DRAM Chip DDR4 SDRAM 8Gb 512M x16 1.2V 96-Pin FBGA is used for high-performance computing applications, providing reliable memory access and efficient data transfer. With a density of 8Gb and a frequency of 3200MHz, it is designed for devices that require fast and synchronous data processing, such as servers, desktops, and laptops. Its compact FBGA package allows for surface mount installation, making it suitable for various electronic designs. Operating within a temperature range of 0°C to 85°C, it supports modern computing needs while consuming a low voltage of 1.2V.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.