BSC028N06NS
- Continuous Drain Current of 100 A
- Drain to Source Breakdown Voltage of 60 V
- Low On-State Resistance of 2.8 mO
- Fast Switching Times with Rise Time of 38 ns and Fall Time of 8 ns
- Surface Mount Package for Easy Integration
The Infineon N Channel MOSFET Transistor is designed for high-efficiency power management applications, offering exceptional performance with a continuous drain current of 100 A and a breakdown voltage of 60 V. This transistor is ideal for various electronic circuits requiring reliable switching and amplification. Packaged in a compact TDSON format, it ensures optimal thermal performance and space-saving integration in your designs.
The MOSFET Transistor, N Channel, is designed for synchronous rectification in switched mode power supplies (SMPS) which are commonly utilized in servers, desktops, and tablet chargers. With a continuous drain current of 100A and a breakdown voltage of 60V, this transistor offers low resistance, making it ideal for efficient power management in electronic applications. Its features include a low on-state resistance of 2.8mΩ and a robust thermal performance suitable for various operating conditions.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.