2SC4304
Description
Trans GP BJT NPN 800V 3A 3-Pin(3+Tab) TO-220F
Collector Emitter Voltage (VCEO)
500mV
Transition Frequency
15MHz
Datasheet
Quantity
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- High Collector Emitter Breakdown Voltage: 800V
- Maximum Collector Current: 3A
- Power Dissipation: 35W
- Transition Frequency: 15MHz
- Lead-Free and RoHS Compliant
- Through Hole Mounting for Easy Integration
The Sanken Trans GP BJT NPN is a high-performance bipolar junction transistor designed for demanding applications requiring high voltage and current handling capabilities. With a collector-emitter breakdown voltage of 800V and a maximum collector current of 3A, this transistor is ideal for power amplification and switching applications. Housed in a robust TO-220 package, it ensures efficient thermal management and reliable performance in various electronic circuits. Additionally, it is RoHS compliant and lead-free, making it suitable for environmentally conscious designs.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
AS6081
AS9120B
ISO 9001
QMS STD 9090
Quantity
Need this part?
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.
Fusion-Tested. Quality Guaranteed.
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