Description
Bipolar (BJT) Single Transistor, NPN, 80 V, 180 Mhz, 500 Mw, 1 A, 100 Rohs Compliant: Yes
Collector Emitter Saturation Voltage
500mV
Collector Emitter Voltage (VCEO)
80V
Transition Frequency
180MHz
Datasheet
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  • High Voltage Rating: 80V Collector-Emitter Voltage
  • Fast Switching Speed: Transition Frequency of 180MHz
  • Compact SOT-89 Package for Space Efficiency
  • Robust Power Handling: Max Power Dissipation of 500mW
  • Wide Operating Temperature Range: -65°C to 150°C
  • Surface Mount Design for Easy Integration
  • RoHS Compliant for Environmental Safety

The NXP Semiconductors NPN Bipolar Single Transistor is a versatile and high-performance electronic component designed for a wide range of applications. With a maximum collector-emitter voltage of 80V and a transition frequency of 180MHz, this transistor is ideal for high-speed switching and amplification tasks. Packaged in a compact SOT-89 form factor, it ensures efficient space utilization while delivering reliable performance in demanding environments. This RoHS-compliant component is suitable for various electronic designs, making it a valuable addition to your circuit solutions.

Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.

AS6081
AS9120B
ISO 9001
QMS STD 9090

Quantity

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