3. BUK9K6R8-40E
NXP Semiconductors

BUK9K6R8-40E

Description
Power Field-Effect Transistor, 40A I(D), 40V, 0.0072ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Gate to Source Voltage (Vgs)
10V
Drain to Source Voltage (Vdss)
40V
Continuous Drain Current (ID)
40A
Drain to Source Resistance
7.2mΩ
Datasheet
Product Image

Quantity

43,500 Available
Need this part?
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.
Fusion-Tested. Quality Guaranteed.
  • Continuous Drain Current (ID):40A
  • Low Drain to Source Resistance:6mO
  • Drain to Source Voltage (Vdss):40V
  • Dual Element Configuration:2 channels
  • Fast Switching Times:Rise Time 22ns, Fall Time 20ns
  • Max Power Dissipation:64W
  • RoHS Compliant:Environmentally friendly design

The NXP Semiconductors SOT-1205 MOSFETs are high-performance dual-channel transistors designed for efficient power management in various electronic applications. With a continuous drain current of 40A and a low drain to source resistance of just 6mO, these MOSFETs ensure minimal power loss and enhanced thermal performance. Compliant with RoHS standards, the SOT-1205 is an ideal choice for environmentally conscious designs, providing reliable operation with fast switching times and robust power handling capabilities.

Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.

AS6081
AS9120B
ISO 9001
QMS STD 9090

Quantity

43,500 Available
Need this part?
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.
Fusion-Tested. Quality Guaranteed.
See something worth saving? Create an account to track this part and get alerts on price and availability updates.
The Latest Insights

The Latest Insights