BUK9K6R8-40E
Description
SOT-1205 MOSFETs ROHS
Gate to Source Voltage (Vgs)
10V
Drain to Source Voltage (Vdss)
40V
Continuous Drain Current (ID)
40A
Drain to Source Resistance
6mΩ
Quantity
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- Continuous Drain Current (ID):40A
- Low Drain to Source Resistance:6mO
- Drain to Source Voltage (Vdss):40V
- Dual Element Configuration:2 channels
- Fast Switching Times:Rise Time 22ns, Fall Time 20ns
- Max Power Dissipation:64W
- RoHS Compliant:Environmentally friendly design
The NXP Semiconductors SOT-1205 MOSFETs are high-performance dual-channel transistors designed for efficient power management in various electronic applications. With a continuous drain current of 40A and a low drain to source resistance of just 6mO, these MOSFETs ensure minimal power loss and enhanced thermal performance. Compliant with RoHS standards, the SOT-1205 is an ideal choice for environmentally conscious designs, providing reliable operation with fast switching times and robust power handling capabilities.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
AS6081
AS9120B
ISO 9001
QMS STD 9090
Quantity
Need this part?
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.
Fusion-Tested. Quality Guaranteed.
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