PMV50EPEA
- Description
- Power Field-Effect Transistor, 4.2A I(D), 30V, 0.045ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor...
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- 4.2A Maximum Drain Current (I(D))
- 30V Maximum Drain-Source Voltage (V(DSS))
- Single-Element Design for Simplified Circuit Integration
- Silicon Metal-Oxide Semiconductor Technology for Enhanced Performance
The NXP Semiconductors Small Signal Field-Effect Transistor is a high-performance P-Channel MOSFET designed for a variety of electronic applications requiring efficient switching and amplification. With a maximum drain current of 4.2A and a voltage rating of 30V, this silicon-based transistor ensures reliable operation in demanding environments. Its compact design and robust performance make it an ideal choice for power management and signal processing in consumer electronics, automotive, and industrial applications.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
AS6081
AS9120B
ISO 9001
QMS STD 9090
Quantity
Need this part?
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.
Fusion-Tested. Quality Guaranteed.
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