SSM6N815R,LF(T
Description
Power Field-Effect Transistor, 6A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
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- High Drain Current Rating (6A I(D))
- N-Channel Configuration for Enhanced Performance
- Single-Element Design for Simplified Circuit Integration
- Metal-Oxide Semiconductor Technology for Low Power Loss
The Toshiba Power Field-Effect Transistor (FET) is a robust N-Channel MOSFET designed to deliver exceptional performance in high-efficiency applications. With a maximum drain current of 6A, this single-element transistor is ideal for power management and switching applications in various electronic devices. Its metal-oxide semiconductor technology ensures reliable operation and minimal power loss, making it a preferred choice for engineers seeking efficiency and reliability in their designs.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
AS6081
AS9120B
ISO 9001
QMS STD 9090
Quantity
Need this part?
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.
Fusion-Tested. Quality Guaranteed.
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