PMPB100XPEAX
- Description
- Transistor MOSFET P-CH 20V 3.2A 8-Pin DFN2020MD T/R
- Gate to Source Voltage (Vgs)
- -12V
- Drain to Source Voltage (Vdss)
- -20V
- Continuous Drain Current (ID)
- -3.2A
- Drain to Source Resistance
- 100mΩ
- Max Junction Temperature (Tj)
- 175°C
- Datasheet
Quantity
9,000 Available- Lead time to Ship
- 1-2 weeks
- Shipping Cost
- Free $0.00
Fusion-Tested. Quality Guaranteed.
Packaging & Pricing
Tape & Reel
9,000Available
3,000Minimum
3,000Increment
| Quantity | Unit Price |
|---|---|
| 3000+ | |
Shipping Details
- Ships From
- SINGAPORE
- Country of Origin
- -
- Lead Time to Ship
- -
- Date Code
- -
- High Continuous Drain Current of -3.2A
- Drain to Source Breakdown Voltage of -20V
- Low Drain to Source Resistance of 100mO
- Fast Turn-On Delay Time of 5ns
- Wide Ambient Temperature Range: -55°C to 175°C
- Lead-Free & RoHS Compliant
The Nexperia P-CH MOSFET is a high-efficiency power transistor designed for demanding applications requiring reliable performance and compact size. With a maximum continuous drain current of -3.2A and a breakdown voltage of -20V, this MOSFET is ideal for various switching applications. Its robust design ensures optimal thermal management with a maximum junction temperature of 175°C, making it suitable for high-temperature environments. Packaged in an 8-pin DFN2020MD format, it offers a space-saving solution for modern electronic designs.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
AS6081
AS9120B
ISO 9001
QMS STD 9090
Quantity
9,000 Available- Lead time to Ship
- 1-2 weeks
- Shipping Cost
- Free $0.00
Fusion-Tested. Quality Guaranteed.
Packaging & Pricing
Tape & Reel
9,000Available
3,000Minimum
3,000Increment
| Quantity | Unit Price |
|---|---|
| 3000+ | |
Shipping Details
- Ships From
- SINGAPORE
- Country of Origin
- -
- Lead Time to Ship
- 1-2 weeks
- Date Code
- 25+
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