CM200DY-13T#300G
Description
IGBT (Insulated Gate Bipolar Transistor) 650V 200A Half-Bridge 4000Vrms
Quantity
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- 650V Voltage Rating
- 200A Current Capacity
- Half-Bridge Configuration for Versatile Applications
- High Isolation Voltage of 4000Vrms
The Mitsubishi 650V 200A Half-Bridge Insulated Gate Bipolar Transistor (IGBT) is designed for high-efficiency power conversion applications, providing exceptional performance in demanding environments. With a voltage rating of 650V and a current capacity of 200A, this IGBT is ideal for use in industrial motor drives, renewable energy systems, and other high-power applications. Its robust construction and ability to handle up to 4000Vrms make it a reliable choice for engineers seeking to optimize their power electronics designs.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
AS6081
AS9120B
ISO 9001
QMS STD 9090
Quantity
Need this part?
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.
Fusion-Tested. Quality Guaranteed.
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