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- High Efficiency and Low Switching Losses
- Robust Thermal Performance
- Wide Voltage and Current Ratings
- Compact Design for Space-Saving Applications
The Mitsubishi Power Ipm Transistor is a cutting-edge Insulated Gate Bipolar Transistor (IGBT) designed for high-efficiency power conversion applications. This advanced component is engineered to deliver superior performance in various industrial settings, ensuring optimal energy management and minimal thermal losses. With its robust construction and exceptional switching capabilities, it is ideal for use in motor drives, renewable energy systems, and other demanding power applications.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
AS6081
AS9120B
ISO 9001
QMS STD 9090
Quantity
Need this part?
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.
Fusion-Tested. Quality Guaranteed.
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