KCMY1VUG6T40

• 6.4TB Capacity on a PCIe 5.0 x4 NVMe interface, 2.5 Inch Form Factor
• Sequential Read 14000 Megabytes per second, Sequential Write 6750 Megabytes per Second
• Random Read 2450K IOPS, Random Write 550K IOPS
• Mixed-Use 3 DWPD Endurance with a 2.5 Million Hour MTBF
• 112-Layer BiCS 3D TLC NAND Flash Technology
• 25W Active and 5W Idle Power from a 12V supply, 0°C to 73°C

The Kioxia KCMY1VUG6T40 is a 6.4TB enterprise NVMe solid state drive from the CM7-V series in a 2.5 inch form factor, connecting over a PCIe 5.0 x4 NVMe interface and built on 112-layer BiCS 3D TLC NAND. It delivers a sequential read of 14000 megabytes per second and a sequential write of 6750 megabytes per second, with 2450K IOPS random read and 550K IOPS random write. The KCMY1VUG6T40 is rated at 3 DWPD endurance with a 2.5 million hour MTBF, drawing 25W active and 5W idle from a 12V supply over 0°C to 73°C.

PCIe 5.0 enterprise SSDs roughly double the interface bandwidth of the previous generation, which matters when a single drive can already saturate a PCIe 4.0 x4 link on sequential reads. A 3 DWPD mixed-use endurance rating targets workloads that write heavily every day: transactional databases, virtualisation hosts, write-back caching tiers, and AI and analytics pipelines that continually stage and rewrite datasets. Data centre operators, hyperscalers and storage array vendors specify this class where a read-intensive drive would wear out inside its warranty. The 25W active power draw means chassis airflow and thermal design must be checked before deploying at density.