2N2405
- Description
- Transistor NPN-silicon Bvceo=120V IC=1A TO-39 Case High Current Fast Switching Applications
- Collector Emitter Voltage (VCEO)
- 90V
- Datasheet
Quantity
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- Collector Emitter Breakdown Voltage: 90V
- Maximum Operating Temperature: 200°C
- Max Power Dissipation: 1W
- Compact TO-39 Package
- RoHS Compliant
- Polarity: NPN
- Three-Pin Configuration
The NTE Electronics NPN Silicon Transistor is designed for high current fast switching applications, offering exceptional performance and reliability. With a collector-emitter breakdown voltage of 90V and a maximum operating temperature of 200°C, this transistor is ideal for demanding environments. Housed in a compact TO-39 package, it features a robust design that ensures efficient operation across a wide temperature range, making it a perfect choice for various electronic applications.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
AS6081
AS9120B
ISO 9001
QMS STD 9090
Quantity
Need this part?
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.
Fusion-Tested. Quality Guaranteed.
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