Description
Transistor NPN Silicon Bvceo=50V IC=50ma TO-92 Case Low Noise High Gain General Purpose Amplifier
Collector Emitter Voltage (VCEO)
50V
Transition Frequency
30MHz
Datasheet
Product Image

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  • Polarity: NPN
  • Collector Emitter Breakdown Voltage: 50V
  • Maximum Collector Current: 50mA
  • Max Power Dissipation: 625mW
  • Transition Frequency: 30MHz
  • TO-92 Package for Easy Integration
  • RoHS Compliant and REACH SVHC Unaffected

The NTE Electronics NPN Silicon Transistor is a versatile and reliable component designed for general-purpose amplification applications. With a collector-emitter breakdown voltage of 50V and a maximum operating temperature of 150°C, this transistor is optimized for low noise and high gain performance. Housed in a compact TO-92 package, it is suitable for a wide range of electronic circuits, making it an essential choice for both hobbyists and professionals alike.

Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.

AS6081
AS9120B
ISO 9001
QMS STD 9090

Quantity

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