Description
Transistor NPN Silicon 55V IC-4amp TO-66 Case General Purpose Switch And Amplifier
Collector Emitter Saturation Voltage
1V
Collector Emitter Voltage (VCEO)
55V
Transition Frequency
3MHz
Datasheet
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  • High Collector Base Voltage (VCBO): 90V
  • Collector Emitter Breakdown Voltage: 300V
  • Max Collector Current: 4A
  • Transition Frequency: 3MHz
  • Wide Operating Temperature Range (-65°C to 200°C)
  • Power Dissipation: 35W
  • Through Hole Mounting with 2 Pins
  • RoHS Compliant

The NTE Electronics NPN Silicon Transistor is a versatile and robust electronic component designed for general-purpose switching and amplification applications. With a maximum collector current of 4A and a collector-emitter breakdown voltage of 300V, this transistor is ideal for high-performance circuits requiring reliable operation. Housed in a TO-66 package, it offers excellent thermal stability with a maximum operating temperature of 200°C, making it suitable for demanding environments.

Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.

AS6081
AS9120B
ISO 9001
QMS STD 9090

Quantity

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