BC850C
Description
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
Collector Emitter Voltage (VCEO)
45V
hFE Min
420
Transition Frequency
100MHz
Datasheet
Quantity
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- Collector Emitter Breakdown Voltage: 45V
- Maximum Collector Current: 100mA
- High Current Gain (hFE Min: 420)
- Wide Operating Temperature Range (-65°C to 150°C)
- Compact SOT-23 Package for Space-Constrained Applications
- RoHS Compliant and REACH SVHC Unaffected
- Transition Frequency: 100MHz for High-Speed Applications
The NXP Semiconductors Small Signal Bipolar Transistor is a high-performance NPN transistor designed for a variety of electronic applications requiring efficient signal amplification and switching capabilities. With a maximum collector current of 100mA and a collector-emitter breakdown voltage of 45V, this transistor is ideal for low-power circuits. Packaged in a compact SOT-23 form factor, it operates effectively across a wide temperature range from -65°C to 150°C, making it suitable for demanding environments.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
AS6081
AS9120B
ISO 9001
QMS STD 9090
Quantity
Need this part?
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.
Fusion-Tested. Quality Guaranteed.
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